Abstract
The results of an investigation of layers of porous silicon (PS), which was obtained by electrochemical etching of p-Si under different illumination conditions — natural light, incandescent light, and light from a mercury lamp with and without a filter — are reported. The structure of the layers was studied by double-crystal x-ray diffractometry, the composition was monitored by means of the IR absorption spectra, and the radiative properties were monitored according to the photoluminescence (PL) spectra. It was established that electrochemical etching under illumination produces PS with a higher porosity and more intense PL whose maximum is shifted into the short-wavelength region. These changes are accompanied by a large disordering of the structure and an increase in the oxygen content in the layer. It is concluded that illumination accelerates the chemical interaction of PS with the electrolyte due to oxidation. High-porosity porous silicon stored in air exhibits quenching of PL. Conversely, PL is excited in layers with a lower porosity. Aging of PS is characterized by an increase in the microdeformation of the layers, a decrease in the crystallite sizes with a partial loss of coherence between the crystallites and the substrate, and an increase in the fraction of the amorphous phase.
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Fiz. Tekh. Poluprovodn. 31, 1261–1268 (October 1997)
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Astrova, E.V., Ratnikov, V.V., Vitman, R.F. et al. Structure and properties of porous silicon obtained by photoanodization. Semiconductors 31, 1084–1090 (1997). https://doi.org/10.1134/1.1187320
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DOI: https://doi.org/10.1134/1.1187320