Abstract
CdSiAs2 belongs to the II-IV-V2 group of chalcopyrite semiconductors with a direct band gap of 1.51 eV at T=300 K. In this paper we investigate the spectral dependence of the steady-state photoluminescence of CdSiAs2 anodized layers. These layers were fabricated by electrochemical anodization of unoriented p-type CdSiAs2 wafers in an solution of HF in ethanol. It is found that a broad photoluminescence band with a maximum at the photon energy ℏω=1.82 eV at 300 K arises. This band lies deep in the fundamental absorption region of CdSiAs2 crystals. The dependence of the parameters of the photoluminescence spectra of anodized Si, GaAs, and CdSiAs2 layers is discussed.
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Fiz. Tekh. Poluprovodn. 31, 313–314 (February 1997)
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Lebedev, A.A., Rud’, Y.V. & Rud’, V.Y. Photoluminescence of anodized layers of CdSiAs2 . Semiconductors 31, 200–201 (1997). https://doi.org/10.1134/1.1187108
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DOI: https://doi.org/10.1134/1.1187108