Abstract
Arrays of vertically aligned InGaAs quantum dots in a AlGaAs matrix have been investigated. It is shown that increasing the band gap of the matrix material makes it possible to increase the localization energy of quantum dots relative to the edge of the matrix band, as well as the states of the wetting layer. The use of an injection laser as the active region makes it possible to decrease the thermal filling of higher-lying states, and thereby decrease the threshold current density to 63 A/cm2 at room temperature. A model explaining the negative characteristic temperature section observed at low temperatures is proposed. The model is based on the assumption that a transition occurs from nonequilibrium to equilibrium filling of the states of the quantum dots.
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Fiz. Tekh. Poluprovodn. 31, 483–487 (April 1997)
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Zhukov, A.E., Egorov, A.Y., Kovsh, A.R. et al. Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix. Semiconductors 31, 411–414 (1997). https://doi.org/10.1134/1.1187173
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DOI: https://doi.org/10.1134/1.1187173