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Effect of radiation on the characteristics of MIS structures containing rare-earth oxides

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Abstract

The results of experimental studies of the effect of γ-irradiation on the electrical properties of MIS structures containing the rare-earth oxides Y2O3, Dy2O3, Tb2O3, Gd2O3, and Lu2O3 are reported. The static characteristics (current-voltage, capacitance-voltage) and dynamic characteristics (transient characteristics, diagrams of oscillatory regimes) of the structures before and after irradiation with doses D=104–106 rad are examined. It is found that the irradiation dose D=106 rad does not produce any substantial degradation of the characteristics of the structures. The radiation-induced changes observed in the experimental samples are consistent with existing data for MIS structures with SiO2 as the insulator.

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Authors and Affiliations

  1. Saratov State University, 410071, Saratov, Russia

    Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva & A. M. Sverdlova

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  1. Ya. G. Fedorenko
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  2. L. A. Otavina
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  3. E. V. Ledeneva
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  4. A. M. Sverdlova
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Fiz. Tekh. Poluprovodn. 31, 885–888 (July 1997)

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Fedorenko, Y.G., Otavina, L.A., Ledeneva, E.V. et al. Effect of radiation on the characteristics of MIS structures containing rare-earth oxides. Semiconductors 31, 752–755 (1997). https://doi.org/10.1134/1.1187085

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  • DOI: https://doi.org/10.1134/1.1187085

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