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Quantum-dot lasers: Principal components of the threshold current density

  • Low-Dimensional Systems
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Abstract

Injection heterolasers based on quantum dots grown by molecular-beam epitaxy have been investigated. It is shown that the room-temperature threshold current density can be lowered to 15 A/cm2 by decreasing the nonradiative recombination and increasing the degree of carrier localization. The density of states in structures with vertically coupled quantum dots was investigated by the electroabsorption method.

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References

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. M. Georgievskii, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, N. N. Ledentsov, P. S. Kop’ev & Zh. I. Alfërov

  2. Institut für Festkörperphysik, Technische Universität Berlin, D-10623, Berlin, Germany

    D. Bimberg

Authors
  1. S. V. Zaitsev
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  2. N. Yu. Gordeev
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  3. V. I. Kopchatov
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  4. A. M. Georgievskii
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  5. V. M. Ustinov
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  6. A. E. Zhukov
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  7. A. Yu. Egorov
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  8. A. R. Kovsh
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  9. N. N. Ledentsov
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  10. P. S. Kop’ev
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  11. Zh. I. Alfërov
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  12. D. Bimberg
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Additional information

Fiz. Tekh. Poluprovodn. 31, 1106–1108 (September 1997)

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Zaitsev, S.V., Gordeev, N.Y., Kopchatov, V.I. et al. Quantum-dot lasers: Principal components of the threshold current density. Semiconductors 31, 947–949 (1997). https://doi.org/10.1134/1.1187140

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  • DOI: https://doi.org/10.1134/1.1187140

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