Abstract
The formation of InAs quantum dots grown by submonolayer migration-enhanced molecular-beam epitaxy on GaAs(100) surfaces with various misorientation angles and directions is investigated. It is shown for the deposition of 2 monolayers (ML) of InAs that increasing the misorientation angle above 3° along the [010], \([0\overline {11} ]\), and [011] directions leads to the formation of several groups of quantum dots differing in geometric dimensions and electronic structure.
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Fiz. Tekh. Poluprovodn. 32, 95–100 (January 1998)
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Tsatsul’nikov, A.F., Volovik, B.V., Ledentsov, N.N. et al. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates. Semiconductors 32, 84–89 (1998). https://doi.org/10.1134/1.1187363
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DOI: https://doi.org/10.1134/1.1187363