Abstract
High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
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Fiz. Tekh. Poluprovodn. 32, 1272–1276 (October 1998)
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Ivanov, S.V., Toropov, A.A., Sorokin, S.V. et al. Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers. Semiconductors 32, 1137–1140 (1998). https://doi.org/10.1134/1.1187546
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DOI: https://doi.org/10.1134/1.1187546