Abstract
Rectifying heterojunctions with photosensitivity 1–5 V/W at T=300 K were obtained by forming optical contacts between free porous silicon and layered InSe and GaSe semiconductors. A wide-band photovoltaic effect was obtained when these heterostructures were illuminated on the free porous silicon plate side. The long-wavelength photosensitivity edge of these devices is determined by direct transitions in InSe or GaSe, respectively. It is concluded that heterojunctions based on free porous silicon plates can be used as wide-band phototransducers.
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Fiz. Tekh. Poluprovodn. 32, 353–355 (March 1998)
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Lebedev, A.A., Rud’, Y.V. & Rud’, V.Y. Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures. Semiconductors 32, 320–321 (1998). https://doi.org/10.1134/1.1187558
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DOI: https://doi.org/10.1134/1.1187558