Abstract
We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained, short-period superlattice are reported. Growth of a fractional-monolayer CdSe region with a nominal thickness of 2–3 ML, i.e., less than the critical thickness, on a ZnSe surface (Δa/a∼7%) leads to the formation of self-organized, pseudomorphic, CdSe-enriched islands with lateral dimensions ∼10–30 nm and density ∼2×1010 cm−2, which serve as efficient centers of carrier localization, giving rise to effective spatial separation of defective regions and regions of radiative recombination and, as a result, a higher quantum efficiency. Laser structures for optical pumping in the (Zn, Mg) (S, Se) system with a record-low threshold power density (less than 4 kW/cm2 at 300 K) and continuous-wave laser diodes in the system (Be, Mg, Zn) Se with a 2.5 to 2.8-ML-thick, fractional-monolayer CdSe active region have been obtained. The laser structures and diodes have an improved degradation resistance.
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Fiz. Tekh. Poluprovodn. 33, 1115–1119 (September 1999)
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Ivanov, S.V., Toropov, A.A., Sorokin, S.V. et al. Blue-green ZnSe lasers with a new type of active region. Semiconductors 33, 1016–1020 (1999). https://doi.org/10.1134/1.1187829
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DOI: https://doi.org/10.1134/1.1187829