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Negative differential resistance of a tunnel diode induced by an external microwave signal

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Abstract

An experimentally observed effect is described in which a section of negative differential resistance appears on the current-voltage characteristic of a tunnel diode exposed to an external microwave signal when the diode bias voltage in the absence of the microwave signal is substantially below the peak value. The measurements were made for signal frequencies in the range 25–140 GHz.

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References

  1. D. A. Usanov, B. N. Korotin, V. E. Orlov, and A. V. Skripal’, Pis’ma Zh. Tekh. Fiz. 16(8), 50 (1990) [Sov. Tech. Phys. Lett. 16, 303 (1990)].

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  2. D. A. Usanov, A. V. Skripal’, B. N. Korotin, and V. E. Orlov, Pis’ma Zh. Tekh. Fiz. 19(7), 81 (1993) [Tech. Phys. Lett. 19, 220 (1993)].

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Authors and Affiliations

  1. N. G. Chernyshevskii State University, Saratov

    D. A. Usanov, S. B. Venig & V. E. Orlov

Authors
  1. D. A. Usanov
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  2. S. B. Venig
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  3. V. E. Orlov
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Additional information

Pis’ma Zh. Tekh. Fiz. 25, 39–42 (January 26, 1999)

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Usanov, D.A., Venig, S.B. & Orlov, V.E. Negative differential resistance of a tunnel diode induced by an external microwave signal. Tech. Phys. Lett. 25, 58–59 (1999). https://doi.org/10.1134/1.1262355

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  • DOI: https://doi.org/10.1134/1.1262355

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