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Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy

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Abstract

The preparation of light-emitting rare-earth-doped (Er) silicon structures has been considered. A new technique of erbium doping of silicon layer during its growth by the molecular beam epitaxy method is suggested.

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Authors and Affiliations

  1. Research Physicotechnical Institute, Niznhi Novgorod State University, Nizhni Novgorod, Russia

    S. P. Svetlov, V. Yu. Chalkov, V. G. Shengurov, E. A. Uskova, G. A. Maksimov, B. A. Andreev, Z. F. Krasil’nik, M. V. Stepikhova & H. Ellmer

Authors
  1. S. P. Svetlov
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  2. V. Yu. Chalkov
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  3. V. G. Shengurov
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  4. E. A. Uskova
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  5. G. A. Maksimov
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  6. B. A. Andreev
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  7. Z. F. Krasil’nik
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  8. M. V. Stepikhova
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  9. H. Ellmer
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 1, 2000, pp. 84–89.

Original Russian Text Copyright © 2000 by Svetlov, Chalkov, Shengurov, Uskova, Maksimov, Andreev, Krasil’nik, Stepikhova, Ellmer.

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Svetlov, S.P., Chalkov, V.Y., Shengurov, V.G. et al. Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy. Tech. Phys. Lett. 26, 41–43 (2000). https://doi.org/10.1134/1.1262734

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  • DOI: https://doi.org/10.1134/1.1262734

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