Abstract
The behaviour of Semiconductor Surface Barrier Detectors has been studied in the temperature range from 300 °K to 4.2 °K. Measurements of the resolution forα- andβ-particles are given. The mean energyɛ required for producing an electron-hole-pair in Si is found to be 3.54±0.10 eV at 279 °K, and 3.72±0,11 eV at 78 °K and 4.2 °K respectively. Measured rise time of detector impulses is compared with theoretical values.
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Für das gezeigte Interesse an der vorliegenden Arbeit danken die Autoren Herrn Professor G.Ortner, Herrn Dr. F.Grass für die Bereitstellung der Präparate und Herrn Dr. H.Aiginger für wertvolle Diskussionen.
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Fabjan, C.W., Kenawy, M. & Rauch, H. Untersuchung von Halbleiter-Sperrschichtzählern bis 4,2 °K. Z. Physik 188, 378–384 (1965). https://doi.org/10.1007/BF01326953
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DOI: https://doi.org/10.1007/BF01326953