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Experimental setup for transmission channeling of MeV ions to study edge dislocations

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Abstract

An experimental facility was built where thin metal (Ta) crystals, with known thickness, could be studied by transmission channeling of MeV ions. The details of obtaining a faint beam (1.5–3.6 MeV) of constant flux (±1%) on the target and normalization of the spectrum of forward scattered particles have been discussed with merits and demerits of various setups used. Preliminary experimental results are reported for measuring dechanneling coefficients from edge dislocations produced by cold work, using H+ ions. The H+ stopping power for Ta in various planar channels and random direction are estimated and using those, it is shown possible to use the setup for thickness measurements of thin crystal films.

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Author notes

  1. P. K. Bhattacharya

    Present address: Ion Implantation Group, VdG. Laboratory, Nuclear Physics Division, B.A.R.C., 400085, Bombay, India

Authors and Affiliations

  1. Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark

    P. K. Bhattacharya, S. K. Andersen, J. Chevallier & N. Hertel

  2. Ion Implantation Group, VdG. Laboratory, Nuclear Physics Division, B.A.R.C., 400085, Bombay, India

    S. K. Andersen, J. Chevallier & N. Hertel

Authors
  1. P. K. Bhattacharya
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  2. S. K. Andersen
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  3. J. Chevallier
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  4. N. Hertel
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Bhattacharya, P.K., Andersen, S.K., Chevallier, J. et al. Experimental setup for transmission channeling of MeV ions to study edge dislocations. Appl. Phys. 21, 47–53 (1980). https://doi.org/10.1007/BF00886482

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  • DOI: https://doi.org/10.1007/BF00886482

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