Abstract
Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
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Ishida, T., Maeda, K. & Takeuchi, S. A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy. Appl. Phys. 21, 257–261 (1980). https://doi.org/10.1007/BF00886176
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DOI: https://doi.org/10.1007/BF00886176