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Application of amorphous silicon field effect transistors in integrated circuits

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Abstract

The work described in this paper is concerned with the possible applications in integrated circuits of thin-film field effect transistors (FETs) made from glow discharge amorphous (a-) silicon and silicon nitride. The construction and performance of inverter circuits, employing integrated a-Si load resistors, are described in some detail. The extension of this basic circuit to NAND and NOR gates, to a bistable multivibrator and to a shift register is reported. Based on the excellent photoconductive properties of a-Si an integrated addressable photosensing element has been constructed, which could have potential applications in imaging arrays.

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Authors and Affiliations

  1. Carnegie Laboratory of Physics, The University, DD1 4HN, Dundee, Scotland

    A. J. Snell, W. E. Spear, P. G. Le Comber & K. Mackenzie

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  1. A. J. Snell
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  2. W. E. Spear
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  3. P. G. Le Comber
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  4. K. Mackenzie
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Snell, A.J., Spear, W.E., Le Comber, P.G. et al. Application of amorphous silicon field effect transistors in integrated circuits. Appl. Phys. A 26, 83–86 (1981). https://doi.org/10.1007/BF00616653

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  • DOI: https://doi.org/10.1007/BF00616653

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