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Diffusion of Al in ion-implanted Pd and Pt

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Abstract

The diffusion coefficients of aluminium have been measured in polycrystalline fcc Pd and Pt. The Al-implanted palladium and platinum samples were annealed at 400°–800 °C and 450°–900 °C, respectively. The aluminium profiles were probed using the nuclear resonance broadening (NRB) technique. Values of (1.41±0.09) and (1.38±0.09) eV for the activation energy and (1.5 +5−1.0 )×10−6 and (4 +10−3 )×10−7cm2/s for the frequency factor were obtained for Al in Pd and Pt, respectively. These anomalous results, compared to the “normal impurity diffusion”, were checked using also Al-evaporated samples.

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Lappalainen, R., Anttila, A. Diffusion of Al in ion-implanted Pd and Pt. Appl. Phys. A 35, 131–134 (1984). https://doi.org/10.1007/BF00616964

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