Abstract
We have reexamined the validity of quasi-static capacitance-voltage (C-V) measurements when applied to hydrogenated amorphous silicon (a-Si: H) diodes. Displacement currents with the application of a linear ramp voltage to an a-Si:H Schottky diode exhibit a slow response with time constants ranging 0.1–1 s which cannot be measured completely by the conventional measurements. The measured capacitance and the effective density of gap states obtained from the measurement depend on the timing of current observation even when the small value of the order of 0.01 V/s is chosen for the ramp rate. We propose a possible means to realize the true quasi-staticC-V measurement of a-Si:H diodes.
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Sakata, I., Okazaki, S. & Hayashi, Y. Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes. Appl. Phys. A 40, 171–176 (1986). https://doi.org/10.1007/BF00617400
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DOI: https://doi.org/10.1007/BF00617400