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A thin-film transistor with a very thin a-Si:H layer and its application for an LC panel

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Abstract

One of the disadvantages of applying an a-Si:H thin-film transistor (TFT) to an active matrix-addressed liquid crystal (LC) panel is that a TFT with an a-Si:H has a very large photo-leakage current because of the high photo-conductivity of an a-Si:H itself.

We have tried decreasing the photo-leakage current by varying the thickness of an a-Si:H layer (L) in TFTs and investigated the characteristics of TFTs, mainly drain voltage versus drain current containing photo-leakage current (I ph).

As a result, it is shown that lnI ph is proportional to InL, and its gradient is 1.5–2.0. We assume that the thinner an a-Si:H layer is, the more effective the recombination of carriers at the interface states is forI ph.

We have applied TFT with a very thin a-Si:H layer (∼30nm) to a full-color active matrix-addressed LC panel for a moving picture display and realized a display of good quality under illuminated condition of 5×104lx without a shading layer in it.

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Authors and Affiliations

  1. Research and Development Department, Seiko Instruments and Electronics Ltd., 563, Takatsukashinden, Matsudo-shi, 271, Chiba, Japan

    H. Tanaka, T. Sakai, M. Shimbo, S. Arai & T. Yamazaki

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  1. H. Tanaka
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  2. T. Sakai
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  3. M. Shimbo
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  4. S. Arai
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  5. T. Yamazaki
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Tanaka, H., Sakai, T., Shimbo, M. et al. A thin-film transistor with a very thin a-Si:H layer and its application for an LC panel. Appl. Phys. A 41, 311–314 (1986). https://doi.org/10.1007/BF00616054

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  • DOI: https://doi.org/10.1007/BF00616054

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