Skip to main content
SpringerLink
Log in

Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Films of GaAs, heavily doped with Sn, which have been grown by molecular-beam epitaxy are found to contain single-crystal Sn particles situated in the nearsurface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C.E.C. Wood: Phys. Thin Films11, 35 (1980)

    Google Scholar 

  2. A.Y. Cho: J. Appl. Phys.46, 1733 (1975)

    Google Scholar 

  3. K. Ploog, A. Fischer: J. Vac. Sci. Technol.15, 255 (1978)

    Google Scholar 

  4. C.E.C. Wood, B.A. Joyce: J. Appl. Phys.49, 4854 (1978)

    Google Scholar 

  5. F. Alexandre, C. Raisin, M.I. Abdalla, A. Brence, J.M. Masson: J. Appl. Phys.51, 4296 (1980)

    Google Scholar 

  6. C.E.C. Wood, D. DeDimone, S. Jedaprawira: J. Appl. Phys.51, 2074 (1980)

    Google Scholar 

  7. J.J. Harris, B.A. Joyce, J.P. Gowers, J.H. Neave: Appl. Phys. A28, 63 (1982)

    Google Scholar 

  8. D.M. DeSimone: Ph. D. Thesis, Cornell University, Ithaca, NY, USA (1980)

    Google Scholar 

  9. C.B. Carter, D.M. DeSimone, H.T. Griem, C.E.C. Wood: Mat. Res. Soc. Symp. Proc.14, 271 (1983)

    Google Scholar 

  10. Y. Kouh, C.B. Carter: Inst. Phys. Conf. Ser. No.67: Sect. 5, 291 (1983)

    Google Scholar 

  11. R. Heckingbottom, G.J. Davis, K.A. Prior: Surf. Sci.132, 375 (1983)

    Google Scholar 

  12. A. Rockett, T.J. Drummond, J.E. Greene, H. Morkoc: J. Appl. Phys.53, 10 (1982)

    Google Scholar 

  13. R.B. Marcus, T.T. Sheng:Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (Wiley, New York 1983) pp. 22–26

    Google Scholar 

  14. J.C. Bravman, R. Sinclair: J. Electron Microscopy Technol.1, 53 (1984)

    Google Scholar 

  15. S.H. Chen, P. Enquist, C.B. Carter: Mat. Res. Soc. Symp. Proc.41, 369 (1985)

    Google Scholar 

  16. S.H. Chen: Ph. D. Thesis, Cornell University, Ithaca, NY, USA (1985)

    Google Scholar 

  17. L. Reimer:Transmission Electron Microscopy, Springer Ser. Opt. Sci.36 (Springer, Berlin, Heidelberg 1983) p. 335

    Google Scholar 

  18. ASTM Data Card 5-0601

  19. M.B. Panish: J. Less-Common Metals10, 416 (1966)

    Google Scholar 

  20. H. Hansen, K. Anderko:Constitution of Binary Alloys (McGraw-Hill, New York 1958) p. 182

    Google Scholar 

  21. W.G. Moffatt:The Handbook of Binary Phase Diagrams (General Electric Co., Schenectady, New York 1980)

    Google Scholar 

  22. T.Z. Vdovina, Z.S. Medvedeva: Russ. J. Inorg. Chem.19, 1234 (1974)

    Google Scholar 

  23. ASTM Data Card 5-0673

  24. ASTM Data Card 30-1370

Download references

Author information

Author notes

  1. S. H. Chen

    Present address: Research Laboratories, Eastman Kodak Company, Building 81, 14650, Rochester, NY, USA

Authors and Affiliations

  1. Department of Materials Science and Engineering, Bard Hall, Cornell University, 14853, Ithaca, NY, USA

    S. H. Chen & C. B. Carter

  2. School of Electrical Engineering, Phillips Hall, Cornell University, 14853, Ithaca, NY, USA

    P. Enquist

Authors
  1. S. H. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. B. Carter
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. P. Enquist
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Chen, S.H., Carter, C.B. & Enquist, P. Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy. Appl. Phys. A 44, 143–151 (1987). https://doi.org/10.1007/BF00626415

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00626415

PACS

Search

Navigation