Abstract
We determined the perpendicular overlayer mismatch for type A and type B NiSi2 samples of thicknesses ranging from about 200 to 1000 Å via bulk x-ray diffraction. An increase in the density of dislocations which are formed to release the strain at the growth temperature leads to an increase in the magnitude of mismatch and strain at room temperature. The results on the thinner type A samples show that the perpendicular overlayer mismatch is found to depend on the overlayer thickness even when no dislocations are present at the interface. This may be due to point defects in the epitaxial NiSi2 layers.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S.P. Murarka:Large Scale Integrated Circuits (Academic, New York 1983) p. 62
F. Föll, P.S. Ho, K.N. Tu: J. Appl. Phys.52, 250 (1981)
R.T. Tung, J.M. Gibson, J.M. Poate: Phys. Rev. Lett.50, 429 (1983)
K.C. Chin, J.M. Poate, J.E. Rowe, T.T. Sheng, A.G. Cullis: Appl. Phys. Lett.38, 988 (1981)
R.T. Tung: Phys. Rev. Lett.52, 467 (1984)
M. Liehr, P.E. Schmid, F.K. LeGoues, P.S. Ho: J. Vac. Sci. Technol. A4, 855 (1986)
R.J. Hauenstein, T.E. Schlesinger, T.C. McGill, B.D. Hunt, L.J. Schowalter: J. Vac. Sci. Technol. A4, 860 (1986)
B.D. Hunt, L.J. Schowalter, N. Lewis, E.L. Hall, R.J. Hauenstein, T.E. Schlesinger, T.C. McGill, M. Okamoto, S. Hashimoto: Mater. Res. Soc. Symp. Proc.54, 479 (1986)
L. Reimer:Transmission Electron Microscopy, 2nd ed., Springer Ser. Opt. Sci.36 (Springer, Berlin, Heidelberg 1987)
D. Cherns, G.R. Anstris, J.L. Hutchinson, J.C.H. Spence: Philos. Mag. A46, 849 (1982)
E.J. van Loenen: J. Vac. Sci. Technol. A4, 939 (1986)
E. Vlieg, A.E.M.J. Fischer, J.F. van der Veen, B.N. Dev, G. Materlik: Surf. Sci.178, 36 (1986)
R.A. Hamm, J.M. Vandenberg, J.M. Gibson, R.T. Tung: Mater. Res. Soc. Symp. Proc.37, 367 (1985)
M. Okamoto, S. Hashimoto, B.D. Hunt, L.J. Schowalter, W.M. Gibson: Mater. Res. Soc. Symp. Proc.56, 157 (1986)
S. Hashimoto, J.-L. Peng, W.M. Gibson, L.J. Schowalter, R.W. Fathauer: Appl. Phys. Lett.47, 1071 (1985)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Zegenhagen, J., Kayed, M.A., Huang, K.G. et al. Determination of lattice mismatch in NiSi2 overlayers on Si(111). Appl. Phys. A 44, 365–369 (1987). https://doi.org/10.1007/BF00624605
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00624605