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Plasma assisted CVD of TiS2

  • Solid-State Ionics
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Abstract

Fine powder and highly oriented thin film TiS2 were prepared by a reaction between TiCl4 and H2S in low-pressure glow discharge at low substrate temperatures (≦450°C). The products were investigated by changing the reaction conditions, e.g. the substrate temperature, the applied rf power between electrodes, and the reactant ratio ([H2S]/[TiCl4]). The fine powder product was an aggregate of plate-like crystallites of some ten nm in width and less than ten nm in thickness. Lithium batteries using the fine TiS2 powder showed a flat discharge voltage around 2.2 V up to 100% utilization. Submicron TiS2 crystallites had their lattice planes perpendicular to the substrate in the thin films having thicknesses greater than 1 μm. This orientation is expected to be favorable for the application to lithium rechargable batteries.

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Author notes

  1. R. Shimanouchi-Futagami

    Present address: Department of Chemistry. Faculty of Science, Kochi University, 2-5-1 Akebonocho, 780, Kochi, Japan

  2. M. Koizumi

    Present address: Institute of Science and Technology, Ryukoku University, Fushimi, 612, Kyoto, Japan

Authors and Affiliations

  1. The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan

    S. Kikkawa, R. Shimanouchi-Futagami & M. Koizumi

Authors
  1. S. Kikkawa
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  2. R. Shimanouchi-Futagami
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  3. M. Koizumi
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Kikkawa, S., Shimanouchi-Futagami, R. & Koizumi, M. Plasma assisted CVD of TiS2 . Appl. Phys. A 49, 105–109 (1989). https://doi.org/10.1007/BF00615472

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  • DOI: https://doi.org/10.1007/BF00615472

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