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Photoexcitation of electron-hole pairs during SIMS

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Abstract

During analysis with SIMS (secondary ion mass spectroscopy) a HeNe laser beam was focussed on the sample surface. While sputtering Si with oxygen ions, the laser irradiation produced a strong increase of the target current and the SIMS intensities as well. This was found for lightly p-doped Si only, whereas no effect was observed for highly p-doped or n-doped Si. To explain this we assume that a depletion layer exists under the surface oxide layer and free charged carriers are created therein by laser excitation. The laser induced effects observed in the SIMS intensity or the target current can be used for measuring the profile of an ion beam or for measuring the alignment of an ion beam at a laser marked target. In addition, laser irradiation combined with SIMS allows one to measure qualitatively both the profile of the doping impurity and its electrically active part.

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  1. IBM Heidelberg, Tiergartenstrasse 15, D-6900, Heidelberg, Fed. Rep. Germany

    J. Kempf, M. Nonnenmacher & H. H. Wagner

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  1. J. Kempf
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  2. M. Nonnenmacher
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  3. H. H. Wagner
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Kempf, J., Nonnenmacher, M. & Wagner, H.H. Photoexcitation of electron-hole pairs during SIMS. Appl. Phys. A 49, 279–283 (1989). https://doi.org/10.1007/BF00616855

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  • DOI: https://doi.org/10.1007/BF00616855

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