Abstract
Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.
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Zammit, U., Gasparrini, F., Marinelli, M. et al. Photothermal deflection spectroscopy study of defects in semi-insulating GaAs. Appl. Phys. A 52, 112–114 (1991). https://doi.org/10.1007/BF00323725
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DOI: https://doi.org/10.1007/BF00323725