Abstract
We investigated defect production in n-type GaAs with two different free-carrier densities (4×1014 and 1×1016/cm3) by using particles liberated from radionuclides. 90Sr and 241Am were employed as beta and alpha sources, respectively. The results obtained for electron irradiation showed that the same set of primary defects can be produced by beta irradiation from the Sr source as by electrons produced in an accelerator. Similarly, the defects produced by alpha irradiation from the Am source closely resemble those introduced by alpha irradiation in a Van de Graaff accelerator. It was found that the relative concentrations of the primary defects in electron-irradiated GaAs are different to those in alpha-particle irradiated GaAs. Further, for the first time, an alpha irradiation induced defect which seems to be related to the doping concentration was observed in the 1016/cm3 Si doped GaAs. It is concluded that the use of radionuclides is an inexpensive and convenient method to introduce and to study radiation induced defects in semiconductors.
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References
D. Pons, J.C. Bourgoin: J. Phys. C. Solid State Phys. 18, 3839 (1985)
D. Stievenard, X. Boddaert, J.C. Bourgoin, H.J. von Bardeleben: Phys. Rev. B 41, 5271 (1990)
D. Stievenard, X. Boddaert, J.C. Bourgoin: Phys. Rev. B 34, 4048 (1986)
G.T. Brown, S.J. Barnett, S.J. Courtney, S.S. Gill: Mater. Sci. Eng. B 2, 91 (1989)
W. Cleland, K. Lark-Horovitz, C. Pigg: Phys. Rev. 78, 814 (1950)
J.H. Crawford, L.M. Slifkin (eds.): Point Defects in Solids, (Plenum, New York 1975) p. 45
D.V. Lang: J. Appl. Phys. 45, 3014 (1974)
F.D. Auret, L.J. Bredell, G. Myburg, W.O. Barnard: Jpn. J. Appl. Phys. 30, 80 (1991)
G. Myburg, F.D. Auret: J. Appl. Phys. 71, 6172 (1992)
F.D. Auret, M. Nel: J. Appl. Phys. 63, 973 (1988)
G. Myburg, W.E. Meyer, F.D. Auret: Rev. Sci. Instrum. 63, 2101 (1992)
Y. Zohta, M.O. Watanabe: J. Appl. Phys. 53, 1809 (1982)
B. Ziebro, J.W. Hemsky, D.C. Look: J. Appl. Phys. 72, 78 (1992)
H. Lefevre, M. Schulz: Appl. Phys. 12, 45 (1977)
D. Pons, J.C. Bourgoin: Phys. Rev. Lett. 47, 1293 (1981)
F.D. Auret, G. Myburg, L.J. Bredell, W.O. Barnard, H.W. Kunert: J. Mater. Sci. Forum 83–87, 1499 (1992)
F.D. Auret, M. Nel, H.C. Snyman: Radiat. Effects 105, 225 (1988)
Y. Yuba, K. Gamo, K. Murakami, S. Namba: Inst. Phys. Conf. Ser. No. 59, Chap. 6, 329 (1980)
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Auret, F.D., Goodman, S.A., Myburg, G. et al. Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides. Appl. Phys. A 56, 547–553 (1993). https://doi.org/10.1007/BF00331403
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DOI: https://doi.org/10.1007/BF00331403