Abstract
Thin insulating and c-axis oriented films of La2CuO4 are grown using a molecular beam epitaxy technique. Subsequently, these films are oxidized electrochemically using a 1N KOH solution. This approach is used to induce superconductivity, leading to a maximum Tc0 of 31 K,, measured both resistively and inductively. The surface morphology, lattice constants and the resistivity before and after the electrochemical treatment are compared.
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Locquet, JP., Gerber, C., Cretton, A. et al. Electrochemical oxidation of La2CuO4 thin films grown by molecular beam epitaxy. Appl. Phys. A 57, 211–215 (1993). https://doi.org/10.1007/BF00331448
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DOI: https://doi.org/10.1007/BF00331448