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On the sensitivity of positrons to electric fields and defects in MBE-grown silicon structures

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Abstract

The sensitivity of the positron to the internal electric fields in good quality thin (≈100 nm) Molecular Beam Epitaxy (MBE)-grown layers is experimentally demonstrated. Both a thin intrinsic layer grown on a p-type substrate and a highly n-doped δ profile buried in intrinsic silicon form effective barriers to positron diffusion although no defects can be detected. We also extract, from a full treatment of the positron diffusion, a quantitative estimate of the concentration, below the detection limits of other methods, of large vacancy clusters in a thick (680 nm) film.

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Britton, D.T., Willutzki, P., Triftshäuser, W. et al. On the sensitivity of positrons to electric fields and defects in MBE-grown silicon structures. Appl. Phys. A 58, 389–393 (1994). https://doi.org/10.1007/BF00323615

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