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Electrical activity and precipitation behavior of copper in gallium arsenide

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Abstract

The electrical properties and preferred lattice site of Cu in GaAs were investigated combining electrical and optical measurements with ion beam and structural analysis. From this comprehensive study it was determined that Cu introduces two levels in the band gap, that the concentration of electrically active centers introduced by Cu diffusion is considerably smaller than the total Cu concentration, that this ratio of electrically active to total Cu concentration depends strongly on the cooling speed after diffusion, and that the portion of Cu that remains electrically inactive forms Cu-Ga precipitates.

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Author notes

  1. R. Leon

    Present address: Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, 0200, Canberra, ACT, Australia

  2. P. Werner

    Present address: Max-Planck Institute for Microstructure Physics, Weinberg 2, D-06120, Halle/Saale, Germany

  3. M. Kaminska

    Present address: Institute of Experimental Physics, Warsaw University, Hoża 69, PL-00-681, Warsaw, Poland

Authors and Affiliations

  1. Department of Materials Science, University of California, 94720, Berkeley, CA, USA

    R. Leon, M. Kaminska & E. R. Weber

  2. Materials Science Division, Lawrence Berkeley Laboratory, 94720, Berkeley, CA, USA

    P. Werner, K. M. Yu, M. Kaminska & E. R. Weber

Authors
  1. R. Leon
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  2. P. Werner
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  3. K. M. Yu
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  4. M. Kaminska
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  5. E. R. Weber
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Leon, R., Werner, P., Yu, K.M. et al. Electrical activity and precipitation behavior of copper in gallium arsenide. Appl. Phys. A 61, 7–16 (1995). https://doi.org/10.1007/BF01538203

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  • DOI: https://doi.org/10.1007/BF01538203

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