Abstract.
In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450 °C, and that the crack patterns are all parallel or perpendicular to <100>. The experimental results on the crack patterns in the sol-gel silica films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.
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Received: 17 February 1999 / Accepted: 31 August 1999 / Published online: 23 February 2000
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Liu, J., Lam, Y., Chan, Y. et al. Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO2 film on InP substrate . Appl Phys A 70, 341–343 (2000). https://doi.org/10.1007/s003390050057
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DOI: https://doi.org/10.1007/s003390050057