Abstract
Frequency differences of up to 900 GHz between two laser lines near 568 nm were measured by mixing laser light and harmonics of 90 GHz microwave radiation. The Schottky point contact diodes used consisted of tungsten tips onn-GaAs bases with different degrees of doping. The formation of the contacts and the sensitivity and frequency limitations of the device are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K.M. Baird, K.M. Evenson, G.R. Hanes, D.A. Jennings, F.R. Petersen: Opt. Lett.4, 263 (1979)
C.R. Pollock, D.A. Jennings, F.R. Petersen, J.S. Wells, R.E. Drullinger, E.C. Beaty, K.M. Evenson: Unpublished (1982)
H.-U. Daniel, M. Steiner, H. Walther: Appl. Phys. B,26, 19 (1981)
R.E. Drullinger, K.M. Evenson, D.A. Jennings, F.R. Petersen, J.C. Bergquist, Lee Burkins, H.-U. Daniel: Appl. Phys. Lett. (to be published in Jan. 1983)
H.-U. Daniel, B. Maurer, M. Steiner, H. Walther: Appl. Phys. Lett.41, (4), 313 (1982)
M.N. Yoder: Solid State Electron.23, 117 (1980)
E.H. Rhoderick: IEE. Proc. Vol. 129, Pt. 1, No. 1, 1 (1982)
S.M. Sze:Physics of Semiconductor Devices (Wiley, New York 1981)