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Isotopically selective CVD of silicon by IRMPD of Si2F6

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Abstract

The IRMPD of Si2F6 by a CO2 TEA laser was applied to isotopically selective CVD of silicon. A white film, probably consisting of polymers of SiF2, was deposited on a metal foil during the irradiation of natural Si2F6 with the laser radiation at 951.19 cm−1 and about 1.5 J cm−2. Upon heating, the film became dark brown, evolving SiF4. The30Si content was found to be as high as about 20%.

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Authors and Affiliations

  1. The Institute of Physical and Chemical Research, 351-01, Wako-shi, Saitama, Japan

    S. Arai, M. Kawai, H. Morimoto & K. Tanaka

  2. The National Institute for Environmental Studies, 305, Tsukuba-shi, Ibaraki, Japan

    H. Seyama & M. Soma

Authors
  1. S. Arai
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  2. M. Kawai
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  3. H. Morimoto
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  4. K. Tanaka
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  5. H. Seyama
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  6. M. Soma
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Arai, S., Kawai, M., Morimoto, H. et al. Isotopically selective CVD of silicon by IRMPD of Si2F6 . Appl. Phys. B 47, 243–245 (1988). https://doi.org/10.1007/BF00697344

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  • DOI: https://doi.org/10.1007/BF00697344

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