Precision interplanar spacing measurements of boron-doped silicon

A study of the lattice parameters of boron-doped silicon (10¹⁴-10¹⁹ cm^-3) grown in (111) and (001) directions by the Czochralski technique has been undertaken. Interplanar spacings (d) were measured by the pseudo-Kossel technique to a precision of 0.001%; different procedures to obtain d and the errors are discussed. The crystallographic planes are found to contract preferentially and the usual study of parameter variation must be made as a function of d. The diffused B particularly contracts the {333} plane, which is more pronounced in high concentrations. An orientation dependence of the diffusion during growth was observed.