The effect of argon ion sputtering on a polycrystalline film of Pd2Si on a Si substrate studied by scanning tunneling microscopy and photoelectron spectroscopy

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Scanning tunneling microscopy (STM) and ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS respectively) have been combined for an investigation of the effects of ion sputtering on Pd2Si, Si and their interface. A 500 Å thick film of Pd2Si on Si has been used as a sample and a depth profile has been obtained by sputtering with argon ions of 5 keV. Characteristic structures appear in the STM images depending on the sample treatment and on the chemical composition of the sample. The integral chemical composition of the surface layer of the sample has been analyzed with XPS and UPS. Microscopic effects of sputtering such as enhanced sputtering at grain boundaries but no marked preferential sputtering of one component, formation of islands at the interface, and indications of structural relaxation shortly after sputtering have been observed.

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