The effect of growth temperature instability in the CBE growth of InxGa1−xAsyP1−y/InP multiple quantum well structures

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Abstract

The reason for a strong temperature dependent composition in the growth of InGaAsP using metalalkyls and group V hydrides has been identified with an enhancement in the phosphorus incorporation with increasing growth temperature. This phenomenon is common to all quaternary compositions, and is stronger for larger bandgap composition. The presence of phosphorus modifies the adsorption characteristics of the Ga-alkyl species, such that the Ga/In composition is enhanced with increasing temperature as opposed to a decreasing trend in the ternary InGaAs growth. Both group III and group V composition enhancements lead to a shorter lattice parameter and a larger energy gap. The combined effects result in a temperature sensitivity which is progressively stronger for shorter wavelength alloys. The effect of growth temperature instability is illustrated by the performance of multiple quantum well modulators.

References (12)

  • J.L. Benchimol et al.

    J. Crystal Growth

    (1991)
  • N.H. Singh et al.

    J. Crystal Growth

    (1992)
  • T.H. Chiu et al.

    J. Crystal Growth

    (1992)
  • T. Martin et al.

    J. Crystal Growth

    (1990)
  • Y. Iimura et al.

    J. Crystal Growth

    (1990)
  • N.K. Kobayashi et al.

    Appl. Phys. Letters

    (1987)
There are more references available in the full text version of this article.

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