Cleaved edge overgrowth for quantum wire fabrication

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Abstract

We review a new molecular beam epitaxy (MBE) technique we call cleaved edge overgrowth (CEO), which makes possible fabrication of quantum wires or other lower dimensional quantum structures with atomic precision. CEO is accomplished by performing two separate MBE overgrowths separated by an in situ cleave of the substrate sample. We review our development of this novel method and give several examples of new structures recently fabricated using it.

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    The “T-wires” were formed by re-growth of QWs on the cleaved surface of the sample [66]. “V-groove” wires have been prepared by etching trenches on substrate surface and then growing QWs on the wafer and the “V-groove” wires were formed at the bottom of the grooves [67]. Another commonly used method is based on strain-driven self-assembly.

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