Electron tunneling studies of ultrathin films near the superconductor-to-insulator transition

https://doi.org/10.1016/0921-4526(94)90252-6Get rights and content

Abstract

Electron tunneling measurements on ultrathin quench-condensed films near the superconductor-to-insulator (SI) transition reveal that the superconducting state degrades with increasing normal state sheet resistance, R, in a manner that depends strongly on film morphology. In homogeneously disordered films, the superconducting energy gap Δo decreases continuously and appears to go to zero at the SI transition. In granular films the transport properties degrade while Δo remains constant. Measurements in the normal state reveal disorder enhanced e- -e- interaction corrections to the density of states. These effects are strong and depend on morphology in a manner that is consistent with their playing an important role in driving the SI transition.

References (30)

  • R.C. Dynes et al.

    Phys. Rev. Lett.

    (1978)
  • A.E. White et al.

    Phys. Rev. B

    (1986)
  • B.G. Orr et al.

    Phys. Rev. B

    (1985)
    H.M. Jaegar

    Phys. Rev. B

    (1986)
  • J.M. Valles et al.

    Proc. Mat. Sci. Symp.

    (1990)
  • S. Kobayashi

    J. Phys. Soc. Jpn.

    (1990)
    R.S. Markiewicz et al.

    J. Low Temp. Phys.

    (1988)
  • R.P. Barber et al.

    Phys. Rev. B

    (1990)
  • M. Strongin

    Phys. Rev. B

    (1971)
  • H.R. Raffy

    Phys. Rev. B

    (1983)
  • J.M. Graybeal et al.

    Phys. Rev. B

    (1984)
  • A.F. Hebard et al.

    Phys. Rev. Lett.

    (1990)
    M.A. Paalanen et al.

    Phys. Rev. Lett.

    (1992)
  • D.B. Haviland et al.

    Phys. Rev. Lett.

    (1989)
  • R.C. Dynes,...
  • J.M. Valles et al.

    Phys. Rev. B

    (1989)
  • J.M. Valles et al.

    Phys. Rev. Lett.

    (1992)
  • S.J. Lee et al.

    Phys. Rev. Lett.

    (1990)
  • Cited by (32)

    View all citing articles on Scopus
    View full text