On the role of carrier gas in the deposition kinetics of SiO2 films produced by low temperature chemical vapour deposition

doi:10.1016/0040-6090(87)90220-3

Thin Solid Films

Volume 146, Issue 2, 16 January 1987, Pages 183-189

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Abstract

In this paper the results of experiments on the deposition rate as a function of the total gas flow rate and of the ratio of O₂ to SiH₄ under various experimental conditions and also the calculated plots of SiH₄ partial pressure and mixing time (the time available to the reactant gases to come in contact) vs. the total gas flow rate are presented.

These data are interpreted in terms of the deposition mechanism and the homogeneous gas phase reaction as follows. (1) At low values of the total gas flow rate, where higher SiH₄ partial pressures and longer mixing times of reactant gases are obtained, a mass transport control (in terms of input gas flow rate limitation) is demonstrated. A homogeneous gas phase reaction is characteristics of this deposition region is determined by the SiH₄ partial pressure and/or mixing time.

1.
(2) At medium values of the total gas flow rate the mass transport control ceases to determine the deposition kinetics, which considered to be diffus kinetically limited, while the intensity of the homogenous gas phase reaction is strongly decreased.
2.
(3) At high values of the total gas flow rate where low input SiH₄ partial pressures and low mixing times of reactant gases are obtained it is shown rthat the surface kinetics control the deposition rate.

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Cited by (1)

Laser-induced chemical vapour deposition and characterization of amorphous silicon oxide films
1988, Thin Solid Films
Amorphous silicon oxide (a-SiO_x) films have been deposited by excimer laser-induced decomposition of an Si₂H₆N₂O gas mixture. The films are characterized in terms of the oxygen composition, hydrogen content, refractive index, electron spin resonance spin density, breakdown strength and interface properties of the silicon metal-insulator-semiconductor structures as a function of the N₂O-to-Si₂H₆ gas flow rate ratio. The annealing effects on the electron spin resonance spin density, breakdown strength and oxide charge density are also studied. Annealing at 450°C was found to be useful for improving the breakdown field and reducing the oxide charge density.

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On the role of carrier gas in the deposition kinetics of SiO2 films produced by low temperature chemical vapour deposition

Abstract

J. Crystal Growth

Thin Solid Films

RCA Rev.

RCA Rev.

RCA Rev.

J. Appl. Phys.

J. Electrochem. Soc.

Rev. Roum. Chim

On the role of carrier gas in the deposition kinetics of SiO₂ films produced by low temperature chemical vapour deposition