Dependence of optical absorption of amorphous InSe films on temperature of heat treatment
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2021, Optical MaterialsSpectroscopic studies of UV irradiated erythrosine B thin films prepared by spin coating technique
2017, Spectrochimica Acta - Part A: Molecular and Biomolecular SpectroscopyCitation Excerpt :It is clear that as the UV exposure time increases both of onset and optical energy gap decreases. The decrease in the value of optical energy gap as a result of exposing the film to UV irradiation is a result of the increase of structural defects and degree of disorder in the films which consequently increases the density and depth of defect states in the gap; such defects produce localized states in the band structure and consequently decrease the optical energy gap [35]. The decrease of energy gap upon exposing films of 2-(2,3-dihydro-1,5-dimethyl-3-oxo-2-phenyl-1H-pyrazol-4-ylimino)-2-(4-nitrophenyl) acetonitrile to doses of γ-ray irradiation has been reported earlier [36].
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2007, Optical MaterialsCitation Excerpt :Significant research efforts have been focused on the study of the charge transport properties of this material [11–15]. The effect of the substrate and annealing temperatures, annealing time and film thickness on the room temperature band gap of amorphous and polycrystalline InSe thin films are also considerably investigated [13,16–19]. Although many works might be found about the band gap of this material, very few works have estimated the refractive index and have studied the temperature dependence of the band gap for these films [20,21].
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