Oxidation of plasma enhanced chemical vapour deposited silicon nitride and oxynitride films

doi:10.1016/0169-4332(89)90417-0

Applied Surface Science

Volume 39, Issues 1–4, October 1989, Pages 25-32

https://doi.org/10.1016/0169-4332(89)90417-0 Get rights and content

Abstract

The wet oxidation of plasma enhanced chemical vapour deposited silicon oxynitride was studied in order to investigate the role of hydrogen bonding in the material in the oxidation mechanism. The oxidation proceeds in a layer-by-layer fashion. It turns out that oxynitride in which hydrogen is solely bonded to nitrogen oxidizes fast, especially when O/(O + N) > 0.4. Material that also contains SiH bonds, looses its hydrogen before the actual oxidation starts and consequently the oxidation proceeds slower. These findings are discussed in the light of a sequence of reactions which are suggested to take place at the oxide/oxynitride interface.

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Oxidation of plasma enhanced chemical vapour deposited silicon nitride and oxynitride films

Abstract

Appl. Surface Sci.

J. Vacuum Sci. Technol.

Appl. Surface Sci.

J. Appl. Phys.