Critical assessment of thickness-dependent conductivity of thin metal films
References (11)
Adv. Phys.
(1952)- et al.
Helv. Phys. Acta
(1965) J. Appl. Phys.
(1967)
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2018, Thin Solid FilmsCitation Excerpt :Second, oxide layers with a resistivity 20 orders of magnitude higher than the pure metal can act as an isolator between the aluminum and the contacts. Third, electrons can be scattered by the surface (particularly a rough surface) and by grain and island boundaries [23–30]. When the sheet resistance is measured by contactless EC methods, the values are influenced by the presence of aluminum oxide due to its extremely high resistivity.
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2015, CarbonCitation Excerpt :The decrease of resistance as a function of the thickness is much faster than for homogeneous thin films (see for instance Fuchs model [36]). It is attributed to the decrease of the roughness-to-thickness ratio of the films when the number of layer increases (as predicted by Namba model for rough thin films [37]). Standard deviations for 3- to 72-device-batches of 20-layer devices were found to range from 8.4% (3 devics) to 43% (72 devices) with an average at 20%. (
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2015, Materials Chemistry and PhysicsCitation Excerpt :Elevating Ts enhanced crystal size and crystallinity. Such changes can increase the conductivity owing to the elongation of the mean free paths of the conduction electrons [31]; phonon scattering is also avoided because of the presence of numerous vacancies and spaced grain boundaries in the material's high defects [32,33]. ( 2) The interfacial polarization decreased with Ts because of the decreased SBET. (
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2015, Applied Surface ScienceCitation Excerpt :The model describes the resistivity of a metal film as the sum of scattering contributions from the bulk and from the surface in the classical size effect regime, i.e., when the film thickness becomes comparable to the electron mean free path; in particular the model allows to take into account anisotropic surface scattering from sinusoidal surface corrugations with amplitude of the same order of magnitude of the film thickness. It turns out that in the Al case the model fails to reproduce the resistivity trend (data not shown) probably because additional contributions to resistivity become active when the residual thickness of the film is still larger than the electron mean free path of Al (Λ∼20 nm) [44]. Fig. 6 suggests that a change in the film structure/morphology occurs when the thickness is decreased below about 90 nm and determines a sudden enhancement of the electrical resistance along the transverse direction of the NWs.
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