Surface states on gallium phosphide
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2017, Physics Letters, Section A: General, Atomic and Solid State PhysicsCitation Excerpt :Gallium phosphide (GaP), an important Group III–V phosphide semiconductor with an indirect band gap of 2.26 eV in room temperature, has been widely applied in light-emitting diodes and photoelectrochemical cells since the 1960s [1,2].
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