A new structure for bi-epitaxial grain boundary junctions

doi:10.1016/0921-4534(94)91518-0

Physica C: Superconductivity

Volumes 235–240, Part 1, December 1994, Pages 589-590

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Abstract

It is difficult to obtain 100% bi-epitaxial 45° grain boundary junctions of YBCO using previously known structures. We have developed a new structure, namely YBCO/CeO₂/YSZ/MgO and YBCO/MgO boundary, so that 100% in-plane rotation of 45° can be routinely obtained.

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We have developed a new bi-epitaxial structure, namely YBCO (780°C)/YBCO (600°C)/YSZ (in-plane rotation 45°) and YBCO (780°C)/YSZ (in-plane rotation 0°) boundary. In comparison to the YBCO/CeO₂/YSZ/MgO (in-plane rotation 45°) and YBCO/MgO (in-plane rotation 0°) boundary previously developed in our laboratory, the new preparation is much simpler and has many advantages. For one, this method avoids the difficulty of lattice mismatch between the pure YBCO film and the MgO substrate. A clean 45° rotation can be achieved without growing different kinds of buffer layers. Furthermore, the first YBCO layer can be used as an endpoint indication during dry etching for device fabrication. Most importantly, the I–V curves taken at low temperatures show the RSJ behavior, with a high J_C value (∼10⁵ A/cm²) and I_CR_N product (∼1 mV) at 4.2 K.
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A new structure for bi-epitaxial grain boundary junctions

Abstract

Appl. Phys. Lett.

Appl. Phys. Lett.