A silicon surface barrier microstrip detector designed for high energy physics

doi:10.1016/0029-554X(80)90812-5

Nuclear Instruments and Methods

Volume 178, Issues 2–3, 15 December 1980, Pages 331-343

https://doi.org/10.1016/0029-554X(80)90812-5 Get rights and content

Abstract

A silicon microstrip detector was manufactured using the surface barrier technique. It has 100 strips at 200 μm pitch and it is 400 μm thick. To each strip a fast current sensitive preamplifier is connected so that minimum ionizing particles can be detected on single strips. The signals have a duration of 40 ns and are processed using standard equipment. A description is given of the results which were obtained in two high energy particle beams at CERN.

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It features 19 “12 mm long strips 300 μm wide and 300 μm apart”. Heijne and colleagues [32] at CERN describes the development of a microstrip detector prototype with 100 strips at 200 μm pitch on a 400 μm thick silicon wafer. Both detectors were manufactured using the surface barrier technique.
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A silicon surface barrier microstrip detector designed for high energy physics

Abstract

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.