A medium energy facility for variable temperature implantation and analysis

doi:10.1016/0029-554X(81)90145-2

Nuclear Instruments and Methods in Physics Research

Volume 189, Issue 1, 1 October 1981, Pages 193-198

https://doi.org/10.1016/0029-554X(81)90145-2 Get rights and content

Abstract

We describe the new ion implantation system at Orsay, which operates from 5 to 190 kV. Sixty-five elements from H to U have been implanted in insulators, semiconductors or metals. Significant currents (several μA) of three-fold ionized elements have been implanted at energies up to 570 keV. Details are provided on the target-holders used, particularly on a variable temperature (1.7–300 K) cryostat and a variable temperature (80–300 K) ganiometer, and on an in situ Rutherford back-scattering analysis set-up (using the 380 keV He²⁺ beam) used in conjunction with all these target-holders. The latter system is used for studies of metastable low-temperature implanted alloys: specific examples will be given.

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Cited by (83)

Investigating radiation damage in nuclear energy materials using JANNuS multiple ion beams
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In situ Transmission Electron Microscopy is a speciality since the early 1980’s [5] of the CSNSM lab (joint research unit of CNRS/IN2P3 and Université Paris-Sud) located in Orsay, France. A 120 kV Philips EM400 TEM and a 190 kV homemade ion implanter (called IRMA [6]) were connected together under the guidance of Dr. Marie-Odile Ruault, allowing in situ observations of modification of materials under ion beam. Several research projects took place mainly on ion beam synthesis in semiconductors and metals using this peculiar equipment e.g. [7–10].
Ion accelerators have been used by material scientists for decades to investigate radiation damage formation in nuclear materials and thus to emulate neutron-induced changes. The versatility of conditions in terms of particle energy, dose rate, fluence, etc., is a key asset of ion beams allowing for fully instrumented analytical studies. In addition, very short irradiation times and handling of non-radioactive samples dramatically curtail the global cost and duration as compared to in-reactor testing. Coupling of two or more beams, use of heated/cooled sample holders, and implementation of in situ characterization and microscopy pave the way to real time observation of microstructural and property evolution in various extreme radiation conditions more closely mimicking the nuclear environments. For these reasons, multiple ion beam facilities have been commissioned worldwide.
In France, under the auspices of the Université Paris-Saclay, the JANNuS platform for ‘Joint Accelerators for Nanosciences and Nuclear Simulation’ comprises five ion implanter and electrostatic accelerators with complementary performances. At CSNSM (CNRS & Univ Paris-Sud, Orsay), a 200 kV Transmission Electron Microscope is coupled to an accelerator and an implanter for in situ observation of microstructure modifications induced by ion beams in a material, making important contribution to the understanding of physical phenomena at the nanoscale. At CEA Paris-Saclay, the unique triple beam facility in Europe allows the simultaneous irradiation with heavy ions (like Fe, W) for nuclear recoil damage and implantation of a large array of ions including gasses for well-controlled modelling-oriented experiments.
Several classes of materials are of interest for the nuclear industry ranging from metals and alloys, to oxides or glasses and carbides. This paper gives selected examples that illustrate the use of JANNuS ion beams in investigating the radiation resistance of structural materials for today’s and tomorrow’s nuclear reactors.
Full characterization of dislocations in ion-irradiated polycrystalline UO<inf>2</inf>
2017, Journal of Nuclear Materials
Citation Excerpt :
To obtain an electron transparent thin foil, mechanical thinning was performed using the tripod polishing technique followed by a chemical etching [11]. 4 MeV Au2+ and 390 keV Xe3+ irradiations were then performed on thin foils at different temperatures and fluences (as summarized in Table 2) using the accelerators ARAMIS [12] and the implanter IRMA [13,14], at the JANNuS-Orsay facility. An ion beam flux in the range of 1–2 × 1011 ions.cm−2.
In order to fully characterize the dislocation loops and lines features (Burgers vectors, habit/slip planes, interstitial or vacancy type) induced by irradiation in UO₂, polycrystalline thin foils were irradiated with 4 MeV Au or 390 keV Xe ions at different temperatures (25, 600 and 800 °C) and fluences (0.5 and 1 × 10¹⁵ ions/cm²), and further analyzed using TEM. In all the cases, this study, performed on a large number of dislocation loops (diameter ranging from 10 to 80 nm) and for the first time on several dislocation lines, reveals unfaulted prismatic dislocation loops with an interstitial nature and Burgers vectors only along the <110>-type directions. Almost 60% of the studied loops are purely prismatic type and lie on {110} habit planes perpendicular to the Burgers vector directions. The others lie on the {110} or {111} planes, which are neither perpendicular to the Burgers vectors, nor contain them. About 87% of the dislocation lines, formed by loop overlapping as fluence increases, are edge or mixed type in the <100>{100} slip systems, as those induced under mechanical load.
Metal-oxide nanoclusters in Fe-10%Cr alloy by ion implantation
2015, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High contents of Al⁺ and O⁺ ions were implanted sequentially into high purity Fe–10%Cr alloy thin foils at room temperature. The as-implanted foils were then studied by transmission electron microscopy (TEM) using the conventional TEM, energy dispersive X-ray (EDX), energy-filtered TEM (EFTEM) and high-resolution TEM (HRTEM) methods. In contrast to the conventional precipitate ensemble synthesis by implantation/annealing, the synthesis of clusters took place already at the implantation stage without requiring any subsequent thermal annealing in our case. The observed precipitates with diameters in the range of 3–25 nm were enriched in Al and O. The crystal lattice of precipitates corresponded to a cubic crystallographic structure of aluminium-rich oxide. The precipitate lattice alignment with the matrix was revealed for at least a part of precipitates. The early stage of nucleation outside thermal treatment is discussed in terms of point defect enhanced diffusion ensuring sufficient atomic transport to allow solute atom precipitation.
Radiation damage in urania crystals implanted with low-energy ions
2014, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Citation Excerpt :
Crystals were then implanted at room temperature with 470-keV Xe or 500-keV La ions at increasing ion fluence from Φ = 1014 cm−2 up to Φ = 1016 cm−2 (corresponding to typical concentration of incorporated element between 0.01 and 1 at. %) on the IRMA ion implanter at CSNSM-Orsay [10]. Crystals were glued on the specific sample holder forming a 7° tilting angle with the main crystallographic orientation of the crystal to prevent any channelling of the bombarding ions.
Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO₂ (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO₂ crystals under irradiation unseen by the measurement of RDA.
Luminescence of a titanate compound under europium ion implantation
2014, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
The ability to incorporate europium ions in a near-surface layer of a nonlinear optical material KTiOPO₄ by ion implantation is reported here. Europium diffusion as well as surface modification were characterized after annealing using RBS. The photoluminescence of the as-implanted samples indicates that the creation of defects gives rise to green visible emission centered about 550 nm. Annealing up to 1000 °C does not allow the oxidation to the 3+ valence state of the europium ion. However it is shown that annealing up to such high temperature gives rise to an intense near infra-red photoluminescence in the range 800–1100 nm in implanted samples at an optimal fluence of 2 × 10¹³ europium ions/cm².
Understanding silicon-rich phase precipitation under irradiation in austenitic stainless steels
2010, Journal of Nuclear Materials
Atom probe samples have been Fe⁺ ion irradiated at different doses (from 0.5 to 10 dpa) and different temperatures (between 300 and 400 °C) in order to understand the mechanism of formation, under irradiation, of Si-rich phases in austenitic stainless steels. Atom probe results show the presence of Si-enriched clusters which can also be enriched in Ni and depleted in Cr. Number densities of solute clusters can be linked to number densities of dislocation loops already observed by transmission electron microscopy in a previous work. This suggests that solute clusters are formed by heterogeneous precipitation on dislocation loops. Furthermore, the evolution of the composition of solute clusters as a function of the irradiation temperature is consistent with a radiation-induced mechanism. Results are also compared with previous results obtained after neutron irradiation at lower dose rate (in term of dpa s⁻¹). The comparison is, here again, consistent with the radiation-induced mechanism. Thus, Si-rich clusters may be formed by radiation-induced segregation to dislocation loops. Results also show that Si is probably dragged to sinks via the interstitial mechanism.

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Part IV. Systems, controls and instrumentationA medium energy facility for variable temperature implantation and analysis

Abstract

Nucl. Instr. and Meth.

Nucl. Inst. and Meth.

Nucl. Instr. and Meth.

Corrosion Sci.

A.V.I.S.E.M.

Backscattering spectrometry

Part IV. Systems, controls and instrumentation
A medium energy facility for variable temperature implantation and analysis