Elsevier

Nuclear Instruments and Methods

Volume 149, Issues 1–3, 15 February–1 March 1978, Pages 65-68
Nuclear Instruments and Methods

Part I. Light element profiling
Depth profiling of helium concentrations in materials using the 4He(7Li, γ)11B reaction

https://doi.org/10.1016/0029-554X(78)90839-XGet rights and content

Abstract

A method for the measurement of helium concentration profiles in the near surface region of materials has been developed. The technique used the 4He(7Li, γ)11B resonant reaction at ELi = 1.68 MeV to detect helium within a few micrometers of the surface of most metals with a depth resolution of 0.03 μm. The level of detectability is less than 1 atomic percent for metals devoid of lithium, boron or carbon over the full probing range. Due to the presence of an adjacent resonance at ELi = 1.43 MeV, an unfolding procedure is employed to uniquely extract the helium concentration profile. Results of measurements made with a gas target and a sample implanted with helium are presented and the capabilities of the technique are discussed.

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