Section VI. Collision cascades, radiation damage and rangesIon-beam-induced amorphization and dynamic annealing processes in silicon
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Also: Department of Electronic Materials Engineering, R.S. Phys. S., ANU, Canberra, 2601, Australia.
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Present address: A.T.&T. Bell Laboratories, Murray Hill, NJ, 07974, USA.
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Also, School of Physics, University of Melbourne, Parkville, 3052, Australia.
Copyright © 1990 Published by Elsevier B.V.