High-dose implantation of Si in SiO2: formation of Si crystallites after annealing

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Abstract

The behavior of high-dose (8 × 1017/cm2) silicon implanted in X-cut, α-quartz at four different temperatures has been investigated. The formation of buried crystallites of silicon under substantial compressive stress and outdiffused silicon under tensile stress on the surface is observed after rapid thermal annealing. In samples annealed at 1000, 1100 or 1150°C the implanted silicon formed buried crystallites, with no evidence of outdiffusion. Differential interference microscopy, Rutherford backscattering spectroscopy and Raman microprobe spectroscopy provided information on the structure of the silicon within and on the surface of the implanted quartz substrate.

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