The effect of ion-implanted impurities on inert gas bubble growth in aluminium

https://doi.org/10.1016/0168-583X(89)90710-6Get rights and content

Abstract

It is shown that low concentration of oxygen and silicon decrease the growth rate of inert gas bubbles in aluminium in the temperature range 350–550°C. The effect is accounted for in terms of segregation to bubble surfaces, resulting either in reduction of surface mobility or an increase in the energy of surface steps.

References (19)

  • R.J. Cox et al.

    Acta Metall.

    (1987)
  • M.P. Seah

    J. Catalysis

    (1979)
  • H.J. Grabke et al.

    Surf. Sci.

    (1977)
  • J.H. Evans et al.

    Nucl. Instr. and Meth.

    (1987)
  • K. Farrell et al.

    Scripta Metall.

    (1977)
  • E. Ruedl

    Mater. Res. Bull.

    (1967)
  • G.L. Kulcinski et al.

    ASTM STP-570

    Proc. Properties of Reactor Structural Alloys

    (1975)
  • P.J. Goodhew et al.

    Proc. R. Soc. (London)

    (1981)
  • U. Bangert et al.

    J. Phys. D.

    (1976)
There are more references available in the full text version of this article.

Cited by (0)

View full text
Copyright © 1989 Published by Elsevier B.V.