Section XIV. Thin films
Ion beam analysis of interface reactions

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Abstract

The oxidation reaction of silicon nitride or silicon oxynitride proceeds at a solid interface. Crucial information about both the reaction mechanism and the kinetics of this process is obtained using high-energy ion beam analysis techniques. The results reviewed in this paper demonstrate that the combination of depth-resolution, sensitivity and quantitative nature of these techniques reveals details which would otherwise have remained unnoticed.

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