Pulse height defects for 16O, 35Cl and 81Br ions in silicon surface barrier detectors

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Abstract

The total pulse height defects (PHDs) of a silicon surface barrier detector (SSBD) for 16O, 35Cl and 81Br ions in the energy range 2–40 MeV have been measured. To evaluate the contribution Ew of the dead layer, its thickness was measured using α-particles. The nuclear defect En was calculated in first-order approximation, using Ziegler's values [J.F. Ziegler, J.P. Biersack and U. Littmark, The Stopping and Ranges of Ions in Matter, vol. 1 (Pergamon Press, New York, 1985)] for both the nuclear and the electronic stopping powers, and the results are compared with other calculations of En. The observed total defects could be essentially accounted for by Ew + En, suggesting that Er, the contribution due to residual defects, is small, in agreement with estimates based on the plasma recombination model [E.C. Finch et al., Nucl. Instr. and Meth. 163 (1979) 467].

References (14)

  • E.C. Finch et al.

    Nucl. Instr. and Meth.

    (1973)
  • B.D. Wilkins et al.

    Nucl. Instr. and Meth.

    (1971)
  • M. Ogihara et al.

    Nucl. Instr. and Meth.

    (1986)
  • M.D. Brown

    Nucl. Instr. and Meth.

    (1973)
  • J.B. Moulton et al.

    Nucl. Instr. and Meth.

    (1978)
  • D.W. Potter et al.

    Nucl. Instr. and Meth.

    (1978)
  • T. Karcher et al.

    Nucl. Instr. and Meth.

    (1971)
There are more references available in the full text version of this article.

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On leave from Vanier College, 821 Ste-Croix Blvd., St. Laurent, Québec, H4L 3X9 Canada.

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