Mesotaxy: Synthesis of buried single-crystal silicide layers by implantation
References (19)
- et al.
- et al. et al.
- et al.
Appl. Phys. Lett.
(1987) - et al.
- et al.
- J.M. Vandenberg, A.E. White, K.T. Short and J.M. Gibson, to be...
- et al.
Appl. Phys. Lett.
(1984) - et al.
Silitsidi Perekhodnikh Metallow Chervertogo Perioda
(1971)
There are more references available in the full text version of this article.
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MeV Au ion induced modifications at Co/Si interface
2009, Applied Surface ScienceSynthesis and characterization of cobalt silicide films on silicon
2006, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :Although several deposition methods including chemical vapor deposition (CVD) [6] and sputter deposition with Ti as an interlayer [7] were used to grow cobalt silicide films, many issues associated with the growth of clean cobalt silicide films, including the oxide contamination and the challenges associated with obtaining sharp cobalt silicide/Si interface. Ion beam implantation and ion assisted deposition have been effectively used to solve some of these issues by growing buried clean cobalt silicide films [1–5]. Successful growth of clean silicide film using sputter deposition has many benefits to the semiconductor industry since this capability is more industry friendly and can be efficiently incorporated for silicide processing.
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2002, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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