Mesotaxy: Synthesis of buried single-crystal silicide layers by implantation

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Abstract

High dose implantation of metal ions in silicon followed by annealing can be used to form buried single-crystal disilicide layers with atomically abrupt interfaces. This technique, which we call mesotaxy, works particularly well for cubic silicides with a small lattice mismatch with Si, such as CoSi2 and NiSi2. However, oriented layers of hexagonal disilicides, such as CrSi2 and YSi2, that are difficult to grow by conventional techniques have also been fabricated in (111) Si. Recent results on oriented growth of a silicide with a completely different lattice structure, CaSi2, will also be presented.

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